Perpendicular magnetic tunnel junctions with multi-interface free layer
نویسندگان
چکیده
Future generations of magnetic random access memory demand tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular with composite free layers where multiple ferromagnet/nonmagnet interfaces contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, Mo) have been employed as coupling in these multi-interface layers. The evolution junction properties under different annealing conditions is investigated. A dependence tunneling magnetoresistance on thickness first CoFeB layer has observed. In Mo MgO are used layers, large above 200% achieved after 400{\deg}C annealing.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0066782